Shih‐Kai Lin

Comparison of MONOS Memory Device Integrity When Using $\hbox{Hf}_{1 - x - y}\hbox{N}_{x}\hbox{O}_{y}$ Trapping Layers With Different N Compositions

Hongxiao Yang, Chun-Kai Cheng, W.J. Chen et al. · IEEE Transactions on Electron Devices · 2008 · 58 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

Pulmonary Hypertension and Left Heart Function: Insights from Tissue Doppler Imaging and Myocardial Performance Index

Shu‐Mei Chang, Chiung‐Chih Lin, Shih‐Hung Hsiao et al. · Echocardiography · 2007 · 42 citations

Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM

Cheng-Hsien Wu, Shih‐Kai Lin, Chih-Hung Pan et al. · IEEE Electron Device Letters · 2018 · 21 citations

Electric Field Effect, Electrical Engineering, Non-volatile Memory +10

Investigation on the current conduction mechanism of HfZrO _x ferroelectric memory

Wen‐Chung Chen, Yong‐Ci Zhang, Po‐Hsun Chen et al. · Journal of Physics D Applied Physics · 2020 · 20 citations

Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory

Shih‐Kai Lin, Cheng-Hsien Wu, Ting‐Chang Chang et al. · IEEE Transactions on Electron Devices · 2021 · 18 citations

Indium Oxide Layer, Non-volatile Memory, Engineering +16