Cheng-Hsien Wu

Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory

Tsung‐Ming Tsai, Chun-Chu Lin, Wen‐Chung Chen et al. · Journal of Alloys and Compounds · 2020 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory

Ting‐Chang Chang, Kan‐Hao Xue, Yu‐Ting Su et al. · IEEE Electron Device Letters · 2018 · 26 citations

Engineering, Electrical Engineering, Low-power Design +13

Ultra-Low Switching Voltage Induced by Inserting SiO₂Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

Chih‐Cheng Shih, Wen‐Jen Chen, Kuan‐Chang Chang et al. · IEEE Electron Device Letters · 2016 · 23 citations

Engineering, Materials Engineering, Materials Science +17

Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications

Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang et al. · Applied Surface Science · 2017 · 22 citations

Engineering, Materials Engineering, Materials Science +17

Multi-nuclear liquid state NMR investigation of the effects of pH and addition of polyethyleneglycol on the long-term hydrolysis and condensation of tetraethoxysilane

Cheng-Hsien Wu, Jiann-Shing Jeng, Jie-Lun Chia et al. · Journal of Colloid and Interface Science · 2010 · 21 citations

Natural Sciences, Biochemistry, Chemistry +6