Seong‐Woo Kim

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Jianbo Liang, Ayaka Kobayashi, Yasuo Shimizu et al. · Advanced Materials · 2021 · 109 citations

Evaluation of subsurface damage in GaN substrate induced by mechanical polishing with diamond abrasives

Hideo Aida, Hidetoshi Takeda, Seong‐Woo Kim et al. · Applied Surface Science · 2013 · 87 citations

Materials Science, Diamond-like Carbon, Gan Substrate +11

Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (1120) misoriented substrate by step-flow mode

Seong‐Woo Kim, Ryota Takaya, Shintaro Hirano et al. · Applied Physics Express · 2021 · 70 citations

345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond

Niloy Chandra Saha, Seong‐Woo Kim, Toshiyuki Oishi et al. · IEEE Electron Device Letters · 2021 · 57 citations

Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (112¯0) sapphire substrate

Seong‐Woo Kim, Yuki Kawamata, Ryota Takaya et al. · Applied Physics Letters · 2020 · 56 citations

Materials Engineering, Materials Science, Mineral Physic +14