Niloy Chandra Saha

345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond

Niloy Chandra Saha, Seong‐Woo Kim, Toshiyuki Oishi et al. · IEEE Electron Device Letters · 2021 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

875-MW/cm² Low-Resistance NO₂ p-Type Doped Chemical Mechanical Planarized Diamond MOSFETs

Niloy Chandra Saha, Seong‐Woo Kim, Toshiyuki Oishi et al. · IEEE Electron Device Letters · 2022 · 33 citations

Engineering, Electrical Engineering, Materials Science +16

Heterointerface properties of diamond MOS structures studied using capacitance–voltage and conductance–frequency measurements

Niloy Chandra Saha, Makoto Kasu · Diamond and Related Materials · 2018 · 30 citations

Engineering, Materials Science, Physics +17

145-MW/cm² Heteroepitaxial Diamond MOSFETs With NO₂ p-Type Doping and an Al₂O₃ Passivation Layer

Niloy Chandra Saha, Toshiyuki Oishi, Seongwoo Kim et al. · IEEE Electron Device Letters · 2020 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

3659-V NO₂ p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates

Niloy Chandra Saha, Seong‐Woo Kim, Koji Koyama et al. · IEEE Electron Device Letters · 2022 · 26 citations

Engineering, Electrical Engineering, Materials Science +17