Hongsik Jeong

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Kwang‐Jin Lee, Beak-Hyung Cho, Wooyeong Cho et al. · IEEE Journal of Solid-State Circuits · 2008 · 189 citations

Non-volatile Memory, Electrical Engineering, Engineering +14

A 0.1-$\mu{\hbox {m}}$ 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Sangbeom Kang, Woo Yeong Cho, Beak-Hyung Cho et al. · IEEE Journal of Solid-State Circuits · 2007 · 134 citations

Non-volatile Memory, Engineering, Memory Design +18

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

Kwang‐Jin Lee, Beak-Hyung Cho, Wooyeong Cho et al. · 2007 · 79 citations

Non-volatile Memory, Electrical Engineering, Engineering +9

Spontaneous sparse learning for PCM-based memristor neural networks

Dong‐Hyeok Lim, Shuang Wu, Rong Zhao et al. · Nature Communications · 2021 · 57 citations · Full text

Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses

Jihoon Yang, Aram Yoon, Donghyun Lee et al. · Advanced Functional Materials · 2023 · 46 citations

Engineering, Emerging Memory Technology, Optoelectronic Devices +18