C. M. Manoj Kumar

Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack

S. Arulkumaran, Geok Ing Ng, S. Vicknesh et al. · Applied Physics Express · 2013 · 60 citations · Full text

Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

Yang Li, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Express · 2013 · 38 citations

High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate

S. Arulkumaran, Kumud Ranjan, Geok Ing Ng et al. · IEEE Electron Device Letters · 2014 · 33 citations · Full text

Electrical Engineering, Sub Xmlns, Engineering +10

Cathodoluminescence of a 2 inch ultraviolet-light-source tube based on the integration of AlGaN materials and carbon nanotube field emitters

Wael Z. Tawfik, C. M. Manoj Kumar, Joonmo Park et al. · Journal of Materials Chemistry C · 2019 · 26 citations

Ultraviolet Light, Optical Materials, Engineering +18

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

Mulagumoottil Jesudas Anand, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Letters · 2015 · 25 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11