Mulagumoottil Jesudas Anand

Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

Yang Li, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Express · 2013 · 38 citations

Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al₂O₃ dielectric gate stack

Mulagumoottil Jesudas Anand, Geok Ing Ng, S. Vicknesh et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2013 · 28 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

Mulagumoottil Jesudas Anand, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Letters · 2015 · 25 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors

Yang Li, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Express · 2015 · 22 citations · Full text

Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress

Mulagumoottil Jesudas Anand, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Express · 2015 · 17 citations

Energy Band Gap, Trap Energy, Electrical Engineering +15