Kumud Ranjan

InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz

Weichuan Xing, Zhihong Liu, Haodong Qiu et al. · IEEE Electron Device Letters · 2017 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack

S. Arulkumaran, Geok Ing Ng, S. Vicknesh et al. · Applied Physics Express · 2013 · 60 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond

Kumud Ranjan, S. Arulkumaran, Geok Ing Ng et al. · IEEE Journal of the Electron Devices Society · 2019 · 43 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Yunwei Li, Geok Ing Ng, S. Arulkumaran et al. · Journal of Applied Physics · 2017 · 39 citations · Full text

Engineering, Electrical Engineering, Physics +17

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

Kumud Ranjan, S. Arulkumaran, Geok Ing Ng et al. · Applied Physics Express · 2014 · 35 citations

Engineering, Electrical Engineering, Materials Science +16