H. H. Lin

Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers

Li-Wei Sung, H. H. Lin · Applied Physics Letters · 2003 · 46 citations

Semiconductor Technology, Photonics, Critical Thickness +11

Enhanced Current Drive of Double-Gate $\alpha$-IGZO Thin-Film Transistors

Tsang-Long Chen, Kuan-Chang Huang, H. H. Lin et al. · IEEE Electron Device Letters · 2013 · 44 citations

Semiconductors, Bottom Insulator/channel Interfaces, Electrical Engineering +14

Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics

Qiandong Zhuang, A. M. R. Godenir, A. Krier et al. · Applied Physics Letters · 2008 · 29 citations

Materials Science, Sb Incorporation, Engineering +11

Comparative study of InAs quantum dots with different InGaAs capping methods

Ching‐Che Lin, Woei Wu Pai, Fu-Yu Chang et al. · Applied Physics Letters · 2007 · 22 citations

Engineering, Strain Relaxation Profiles, Semiconductor Nanostructures +18

Fabrication of self-aligned GaAs/AlGaAs and GaAs/InGaP microwave power heterojunction bipolar transistors

F. Ren, J. R. Lothian, S. J. Pearton et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 19 citations

Electrical Engineering, Electronic Devices, Engineering +11