A. M. R. Godenir

Room temperature photoluminescence at 4.5μm from InAsN

Qiandong Zhuang, A. M. R. Godenir, A. Krier et al. · Journal of Applied Physics · 2008 · 37 citations · Full text

Epitaxial Growth, Photoluminescence, Engineering +12

Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics

Qiandong Zhuang, A. M. R. Godenir, A. Krier et al. · Applied Physics Letters · 2008 · 29 citations

Materials Science, Sb Incorporation, Engineering +11

Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys

R. Kudrawiec, J. Misiewicz, Qiandong Zhuang et al. · Applied Physics Letters · 2009 · 22 citations

Engineering, Magnetic Resonance, Photoreflectance Spectroscopy +17

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

Jordi Ibáñez, Robert Oliva, M. de la Mare et al. · Journal of Applied Physics · 2010 · 21 citations · Full text

Materials Science, Optical Materials, Engineering +13

Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth

Rui Chen, S. Phann, Handong Sun et al. · Applied Physics Letters · 2009 · 20 citations

Photonics, Photoluminescence, Engineering +13