Toyoji Yamamoto

High Performance 60 nm Gate Length Germanium p-MOSFETs with Ni Germanide Metal Source/Drain

Toyoji Yamamoto, Yoshimi Yamashita, M. Harada et al. · 2007 · 63 citations

Successful Fabrication, Electrical Engineering, Engineering +11

Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility

Noriyuki Taoka, M. Harada, Yoshimi Yamashita et al. · Applied Physics Letters · 2008 · 48 citations

Device Modeling, Electrical Engineering, Semiconductor Device +14

Effects of Selecting Channel Direction in Improving Performance of Sub-100 nm MOSFETs Fabricated on (110) Surface Si Substrate

Hidetatsu Nakamura, Tatsuya Ezaki, Toshiyuki Iwamoto et al. · Japanese Journal of Applied Physics · 2004 · 24 citations

Engineering, Surface Si, Integrated Circuits +16

Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps

Noriyuki Taoka, Toyoji Yamamoto, M. Harada et al. · Journal of Applied Physics · 2009 · 15 citations

Engineering, Conductance Method, Semiconductor Device +16

Electron holography for analysis of deep submicron devices: Present status and challenges

Nobuyuki Ikarashi, Akio Toda, Kazuya Uejima et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 15 citations

Electron Holography Analysis, Engineering, Microscopy +18