M. Harada

High Performance 60 nm Gate Length Germanium p-MOSFETs with Ni Germanide Metal Source/Drain

Toyoji Yamamoto, Yoshimi Yamashita, M. Harada et al. · 2007 · 63 citations

Successful Fabrication, Electrical Engineering, Engineering +11

600 V trench IGBT in comparison with planar IGBT-an evaluation of the limit of IGBT performance

M. Harada, T. Minato, H. Takahashi et al. · 2002 · 60 citations

Electrical Engineering, Engineering, Trench Pitch +12

Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility

Noriyuki Taoka, M. Harada, Yoshimi Yamashita et al. · Applied Physics Letters · 2008 · 48 citations

Device Modeling, Electrical Engineering, Semiconductor Device +14

Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)

T. Nitta, T. Minato, Maasa Yano et al. · 2002 · 46 citations

Experimental Results, Electrical Engineering, Simulation Analysis +10

Which is cooler, trench or multi-epitaxy? Cutting edge approach for the silicon limit by the super trench power MOS-FET (STM)

T. Minato, T. Nitta, A. Uenisi et al. · 2002 · 36 citations

Materials Engineering, Electrical Engineering, Engineering +12