High Performance 60 nm Gate Length Germanium p-MOSFETs with Ni Germanide Metal Source/Drain

Abstract

This paper demonstrates the successful fabrication of sub-100 nm Ge pMOSFETs with NiGe MSD and the high device performance, for the first time. It is also revealed that impurity profile engineering is still effective in controlling the electrical characteristics of short channel Ge MOSFET and that the concept of the universality for the inversion-layer mobility does hold even for Ge p-MOSFETs.