Jagar Singh

N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide

S. Zhu, Kevin J. Chen, M.-F. Li et al. · IEEE Electron Device Letters · 2004 · 204 citations

Schottky Barrier Source/drain, Electrical Engineering, Engineering +10

Schottky-Barrier S/D MOSFETs With High-<tex>$Kappa$</tex>Gate Dielectrics and Metal-Gate Electrode

Shiyang Zhu, H.Y. Yu, S. J. Whang et al. · IEEE Electron Device Letters · 2004 · 107 citations

Semiconductor Technology, Electrical Engineering, Engineering +10

14-nm FinFET Technology for Analog and RF Applications

Jagar Singh, J. Ciavatti, K. Sundaram et al. · IEEE Transactions on Electron Devices · 2017 · 105 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate

Shiyang Zhu, Rui Li, S.J. Lee et al. · IEEE Electron Device Letters · 2005 · 97 citations

Electrical Engineering, Metal Gate, Schottky-barrier Germanide S/d +12

14nm FinFET technology for analog and RF applications

Jagar Singh, A. Bousquet, J. Ciavatti et al. · 2017 · 51 citations

Electrical Engineering, Engineering, Rf Semiconductor +9