IEEE Electron Device Letters · 2005 · 98 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor InterfacesGate Dielectric EngineeringGate DielectricsGate Oxide Thickness EffectsMetal Gate ScalingSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSilicon
Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as /spl sim/5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si.
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