B. Min

Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS.

L. Mathew, M. Sadd, S. Kalpat et al. · 2006 · 23 citations

Engineering, Computer Engineering, Electrical Engineering +17

A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications

P. Srinivasan, P. L. Colestock, Theophilus Samuels et al. · 2020 · 23 citations

Engineering, Electrical Engineering, Circuit Theory +12

Self-Heating Effects on Hot Carrier Degradation and Its Impact on Logic Circuit Reliability

P. Paliwoda, Z. Chbili, A. Kerber et al. · IEEE Transactions on Device and Materials Reliability · 2019 · 19 citations

Engineering, Electrical Engineering, Electronic Materials +15

Gate oxide thickness dependence of RIE-induced damages on n-channel MOSFET reliability

Atul Joshi, L. Chung, B. Min et al. · 1996 · 17 citations

Engineering, Electrical Engineering, Materials Science +16

Application of on-chip MIM decoupling capacitor for 90nm SOI microprocessor

D. Roberts, Walter Johnstone, H. Sanchez et al. · 2006 · 17 citations

Engineering, Computer Engineering, Electrical Engineering +6