Jossue Montes

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

Houqiang Fu, Izak Baranowski, Xuanqi Huang et al. · IEEE Electron Device Letters · 2017 · 105 citations

Semiconductor Technology, Aluminium Nitride, Electrical Engineering +13

Demonstration of mechanically exfoliated <i>β</i>-Ga2O3/GaN p-n heterojunction

Jossue Montes, Chen Yang, Houqiang Fu et al. · Applied Physics Letters · 2019 · 83 citations · Full text

Materials Science, Semiconductors, Materials Engineering +13

Investigation of GaN-on-GaN vertical <i>p</i>-<i>n</i> diode with regrown <i>p</i>-GaN by metalorganic chemical vapor deposition

Kai Fu, Houqiang Fu, Hanxiao Liu et al. · Applied Physics Letters · 2018 · 71 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +12

Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications

Hong Chen, Houqiang Fu, Xuanqi Huang et al. · Optics Express · 2017 · 65 citations · Full text

Wide-bandgap Semiconductor, Photonics, Engineering +15

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics

Kai Fu, Houqiang Fu, Xuanqi Huang et al. · IEEE Electron Device Letters · 2019 · 61 citations

Materials Science, Semiconductors, Electrical Engineering +15