Jossue Montes

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

Houqiang Fu, Izak Baranowski, Xuanqi Huang et al. · IEEE Electron Device Letters · 2017 · 110 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of mechanically exfoliated <i>β</i>-Ga2O3/GaN p-n heterojunction

Jossue Montes, Chen Yang, Houqiang Fu et al. · Applied Physics Letters · 2019 · 85 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Kai Fu, Houqiang Fu, Xuanqi Huang et al. · IEEE Journal of the Electron Devices Society · 2020 · 81 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings

Houqiang Fu, Kai Fu, Shanthan Reddy Alugubelli et al. · IEEE Electron Device Letters · 2019 · 72 citations

Engineering, Electrical Engineering, Physics +17

Investigation of GaN-on-GaN vertical <i>p</i>-<i>n</i> diode with regrown <i>p</i>-GaN by metalorganic chemical vapor deposition

Kai Fu, Houqiang Fu, Hanxiao Liu et al. · Applied Physics Letters · 2018 · 71 citations · Full text

Engineering, Electrical Engineering, Materials Science +17