J.C. Hsieh - Concepedia

Author

J.C. Hsieh

United Microelectronics (Taiwan)ORCID

Also Known As

Hsieh, Jeremy, J C Hsieh, J. C. Hsieh, J. Hsieh, J.C. Hsieh, Jeremy Hsieh

Publications

477

Citations

H-Index

Concepts

All Affiliations

United Microelectronics (Taiwan)National Yang Ming Chiao Tung University Stanford University Technion – Israel Institute of Technology National Cheng Kung University

About

J.C. Hsieh is an author at United Microelectronics (Taiwan) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	407
2	Electrical Engineering	10	10	407
3	Applied Physics	9	9	391
4	Materials Science	3	3	212
5	Materials Engineering	1	1	26

J.C. Hsieh

Publications

407

Citations

H-Index

Page 1

	Year	Citations
High-density MIM capacitors using Al<sub>2</sub>O<sub>3</sub> and AlTiO<sub>x</sub> dielectrics S.B. Chen, Chyong‐Huey Lai, Albert Chin, IEEE Electron Device Letters Materials ScienceHigh-density Mim CapacitorsElectrical EngineeringDielectricsEngineering	2002	168
40-GHz coplanar waveguide bandpass filters on silicon substrate K.T. Chan, C.Y. Chen, Albert Chin, IEEE Microwave and Wireless Components Letters High Performance FilterElectrical EngineeringMillimeter Wave TechnologyEngineeringProton Implantation	2002	49
Frequency-dependent capacitance reduction in high-k AlTiO<sub>x</sub> and Al<sub>2</sub>O<sub>3</sub> gate dielectrics from IF to RF frequency range S.B. Chen, Chyong‐Huey Lai, K.T. Chan, IEEE Electron Device Letters EngineeringRadio FrequencyElectromagnetic CompatibilityRf SemiconductorNanoelectronics	2002	46
Investigation and Localization of the SiGe Source/Drain (S/D) Strain-Induced Defects in PMOSFET With 45-nm CMOS Technology Chiao-Yang Cheng, Y.K. Fang, J.C. Hsieh, IEEE Electron Device Letters Device ModelingSemiconductor TechnologyElectrical EngineeringSige Source/drainEngineering	2007	35
Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER) Yu‐Chi Yang, N. Breil, C. Y. Yang, EngineeringSilicon On InsulatorSemiconductor DeviceElectronic DevicesAdvanced Packaging (Semiconductors)	2016	26
Fully Differential Internal Electrostatic Transduction of a Lamé-Mode Resonator Maryam Ziaei-Moayyed, David Elata, J.C. Hsieh, Electrical EngineeringLamé-mode ResonatorEngineeringMicrofabricationCavity Qed	2009	23
Study and improvement of anomalous interface states of metal-oxide-semiconductor structures induced by rapid thermal post-oxide annealing J.C. Hsieh, Y.K. Fang, C. W. Chen, Journal of Applied Physics Materials ScienceIi-vi SemiconductorElectrical EngineeringImproved ResultsEngineering	1993	18
RF noise in 0.18-μm and 0.13-μm MOSFETs Cheng-Tung Huang, Chyong‐Huey Lai, J.C. Hsieh, IEEE Microwave and Wireless Components Letters Electrical EngineeringEngineeringRf SemiconductorRadio FrequencyMeasurement	2002	16
RF MIM capacitors using high-K Al/sub 2/O/sub 3/ and AlTiO/sub x/ dielectrics S.B. Chen, Chyong‐Huey Lai, Albert Chin, Low-power ElectronicsElectrical EngineeringRf Mim CapacitorsEngineeringVlsi Design	2003	16
Higher-order mode internal electrostatic transduction of a bulk-mode ring resonator on a quartz substrate Maryam Ziaei-Moayyed, J.C. Hsieh, J.-W. P. Chen, TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Optical MaterialsEngineeringMum Outer-diameterOptoelectronic DevicesIntegrated Circuits	2009	10

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