40-GHz coplanar waveguide bandpass filters on silicon substrate

Abstract

We report a very simple process to fabricate high performance filter on Si at 40 GHz using proton implantation. The filter has only -3.4-dB loss at peak transmission of 40 GHz with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-μm SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> isolated Si has much worse transmission and reflection loss. This is the first demonstration of high performance filter at the millimeter-wave regime on Si with process compatible with current VLSI technology.