Zehao Lin - Concepedia

Author

Zehao Lin

Also Known As

Lin, Zehao, Z. Lin, Z. Z. Lin, Zehao Lin, Zehao 泽昊 Lin 林, Zhen-su Lin, Zhengzheng Lin, Zheqiao Lin, Zhigao Lin, Zhihai Lin

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Purdue University West Lafayette Fudan University Shanghai Jiao Tong University Institute of Modern Physics The University of Texas at Dallas

About

Zehao Lin is an author at Purdue University West Lafayette specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	23	952
2	Applied Physics	20	23	952
3	Electrical Engineering	18	18	862
4	Chemistry	5	5	97
5	Natural Sciences	4	4	79

Zehao Lin

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Scaled indium oxide transistors fabricated using atomic layer deposition Mengwei Si, Zehao Lin, Zhizhong Chen, Nature Electronics Electrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsOxide Electronics	2022	262
Why In<sub>2</sub>O<sub>3</sub> Can Make 0.7 nm Atomic Layer Thin Transistors Mengwei Si, Yaoqiao Hu, Zehao Lin, Nano Letters	2020	195
Enhancement-Mode Atomic-Layer-Deposited In<sub>2</sub>O<sub>3</sub> Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen Environment Mengwei Si, Adam Charnas, Zehao Lin, IEEE Transactions on Electron Devices Oxide HeterostructuresSemiconductorsElectrical EngineeringHydrogen EnvironmentMaximum Drain Current	2021	71
Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition Jie Zhang, Dongqi Zheng, Zhuocheng Zhang, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringIgo TftsEngineering	2022	61
Chiral Landau levels in Weyl semimetal NbAs with multiple topological carriers Xiang Yuan, Zhongbo Yan, Chaoyu Song, Nature Communications	2018	56
High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration Mengwei Si, Zehao Lin, Zhizhong Chen, IEEE Transactions on Electron Devices EngineeringDevice IntegrationHigh Maximum DrainIntegrated CircuitsInterconnect (Integrated Circuits)	2021	52
Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition Jie Zhang, Zehao Lin, Zhuocheng Zhang, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringThin Film Process TechnologySemiconductor DeviceSemiconductors	2023	47
Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition Zhuocheng Zhang, Yaoqiao Hu, Zehao Lin, IEEE Transactions on Electron Devices Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringOxide Electronics	2021	42
Enhancement-mode atomic-layer thin In2O3 transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by oxygen plasma treatment Adam Charnas, Mengwei Si, Zehao Lin, Applied Physics Letters Electrical EngineeringSemiconductor DeviceEngineeringDrain VoltageOxygen Plasma Treatment	2021	39
First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability Dongqi Zheng, Adam Charnas, Jackson Anderson, 2022 International Electron Devices Meeting (IEDM) Materials ScienceSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	2022	36

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