Yaoqiao Hu

Why In₂O₃ Can Make 0.7 nm Atomic Layer Thin Transistors

Mengwei Si, Yaoqiao Hu, Zehao Lin et al. · Nano Letters · 2020 · 195 citations · Full text

Non-epitaxial single-crystal 2D material growth by geometric confinement

Ki Seok Kim, Doyoon Lee, Celesta S. Chang et al. · Nature · 2023 · 178 citations

Materials Science, Engineering, Crystal Growth Technology +4

First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6

Yaoqiao Hu, Jeongwoon Hwang, Yeonghun Lee et al. · Journal of Applied Physics · 2019 · 78 citations

Study of the heavily p-type doping of cubic GaN with Mg

Carlos A. Hernández‐Gutiérrez, Y.L. Casallas-Moreno, Victor-Tapio Rangel-Kuoppa et al. · Scientific Reports · 2020 · 45 citations · Full text

First Principles Design of High Hole Mobility <i>p</i>-Type Sn–O–<i>X</i> Ternary Oxides: Valence Orbital Engineering of Sn²⁺ in Sn²⁺–O–<i>X</i> by Selection of Appropriate Elements <i>X</i>

Yaoqiao Hu, Xiaolong Yao, Darrell G. Schlom et al. · Chemistry of Materials · 2020 · 43 citations

Engineering, Solid-state Chemistry, Chemistry +17