Digital etching of GaAs: New approach of dry etching to atomic ordered processing

T. Meguro, Manabu Hamagaki, S. Modaressi, +4

Applied Physics Letters

EngineeringElectron-beam LithographyDigital EtchingPattern TransferOrdered Processing +15

New high current low energy ion source

T. Hara, Manabu Hamagaki, A. I. Sanda, +2

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Low-power ElectronicsElectrical EngineeringEnergy HarvestingEngineeringIon Implantation +11

Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System

Takashi Meguro, Masashi Ishii, Hirokazu Kodama, +4

Japanese Journal of Applied Physics

Electrical EngineeringEngineeringElectron-beam-excited Plasma SystemElectron-beam LithographyMicrofabrication +10

New Etching System with a Large Diameter Using Electron Beam Excited Plasma

Makoto Ryoji, Tamio Hara, Katsu Ohnishi, +4

Japanese Journal of Applied Physics

Materials ScienceNew Etching SystemElectrical EngineeringPlasma ElectronicsEngineering +11

Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System

Jin-Zhong Yu, Norio Masui, Yoshihiko Yuba, +5

Japanese Journal of Applied Physics

SemiconductorsGaas EtchedElectrical EngineeringIon ImplantationEngineering +12

Quasi-Steady Laser Oscillation in the Recombining Hydrogen Plasma

Tamio Hara, Kunihiko Kodera, Manabu Hamagaki, +3

Japanese Journal of Applied Physics

Quasi-steady Laser OscillationEngineeringPhysicsLaser Plasma PhysicsPure Hydrogen Plasma +10

A dc high-current low-energy electron beam gun

T. Ohgo, Tamio Hara, Manabu Hamagaki, +2

Journal of Applied Physics

Electron DensityElectrical EngineeringPlasma ElectronicsEngineeringElectron Beam +13

Effect of Ionization Potential of Hole Transport Layer on Device Characteristics of Organic Light Emitting Diode with Oxygen Plasma Treated Indium Tin Oxide

Yuichi Hashimoto, Manabu Hamagaki, Takeshi Sakakibara

Japanese Journal of Applied Physics

EngineeringOrganic ElectronicsKinetic EnergyChemistryLuminescence Property +14

High-rate ion etching of GaAs and Si at low ion energy by using an electron beam excited plasma system

Jinzhong Yu, Tamio Hara, Manabu Hamagaki, +3

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Electrical EngineeringIon Energy RangeEngineeringIon ImplantationElectron Beam +11

High Degree of Dissociation of Nitrogen Molecules in Large-Volume Electron-Beam-Excited Plasma

Kazunari Taniguchi, Masaya Sugimoto, Shingo Masuko Shingo Masuko, +4

Japanese Journal of Applied Physics

Nitrogen MoleculesEngineeringLarge-volume Electron-beam-excited PlasmaLaser-plasma InteractionPlasma Science +15