Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 66 citations · 0 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsPlasma PhysicsRadiation PhysicsElectron Beam PhysicsIon ImplantationPlasma SourcesCurrent DensityEtchingIon Beam EtchingIon Source DesignIon Source PhysicsIon SourcesLow-energy Electron BeamsLow-energy Materials
We have developed a new type of ion source which is excited by a low energy and high current electron beam. The source has an extractable ion current density up to 0.62 A/cm2 and a low acceleration voltage less than 60 V. This ion source will open a new way for low energy ion processing such as damageless ion etching, ion beam crystal growth, and deposition.