Characterization of ion beam etching induced defects in GaAs

Yoshihiko Yuba, Tomohiro Ishida, Kenji Gamo, +1

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Semiconductor TechnologyElectrical EngineeringIon ImplantationEngineeringCrystalline Defects +8

Nanostructure fabrication of InP by low energy ion beams

Yoshihiko Yuba, Sumiaki Hazama, Kenji Gamo

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Nanostructure FabricationIon ImplantationEngineeringNanotechnologyApplied Physics +1

Defects induced by focused ion beam implantation in GaAs

Hideto Miyake, Yoshihiko Yuba, Kenji Gamo, +2

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

SemiconductorsSemiconductor TechnologyElectrical EngineeringIon ImplantationEngineering +10

Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System

Jin-Zhong Yu, Norio Masui, Yoshihiko Yuba, +5

Japanese Journal of Applied Physics

SemiconductorsGaas EtchedElectrical EngineeringIon ImplantationEngineering +12

Laser annealing of ohmic contacts on GaAs

A. H. Oraby, K. Murakami, Yoshihiko Yuba, +3

Applied Physics Letters

Materials ScienceBackside IrradiationAu-ge Ohmic ContactsOptical MaterialsW Cm2 +13

Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics

Yoshihiko Yuba, Kenji Gamo, Hiroshi Toba, +2

Japanese Journal of Applied Physics

EngineeringElectron-beam LithographyMicroscopyElectron Beam DiffractionIntegrated Circuits +15

Defect study in GaAs bombarded by low-energy focused ion beams

Kenji Gamo, Hideto Miyake, Yoshihiko Yuba, +4

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Defect StudyIon ImplantationEngineeringCrystalline DefectsPhysics +9

Hall Effect Measurements of Zn Implanted GaAs

Yoshihiko Yuba, Kenji Gamo, Kohzoh Masuda, +1

Japanese Journal of Applied Physics

Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering +11

Deep levels induced by high-energy boron ion implantation into <i>p</i>-silicon

H. Sayama, M. Takai, Yoshihiko Yuba, +3

Applied Physics Letters

Awaking of ferromagnetism in GaMnN through control of Mn valence

S. Sonoda, Isao Tanaka, Fumiyasu Oba, +12

Applied Physics Letters

EngineeringMagnetic ResonanceMagnetoresistanceMagnetismMn Valence +14