Masamichi Kamiyama

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Publications

Citations

176

H-Index

Active since

2012

Affiliations

Transphorm (United States)(Current)

Masamichi Kamiyama is an author at Transphorm (United States) specializing in semiconductor devices, wide-bandgap semiconductor devices, and engineering.

Publications per year

2012–2022

Publications

5.65 GHz High-Efficiency GaN HEMT Power Amplifier With Harmonics Treatment up to Fourth Order

Masamichi Kamiyama, Ryo Ishikawa, K. Honjo · IEEE Microwave and Wireless Components Letters · 2012 · 49 citations

Engineering, Electrical Engineering, Microwave Engineering +16

600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates

T. Kikkawa, Tsutomu Hosoda, Kenji Imanishi et al. · 2014 · 46 citations

Engineering, Electrical Engineering, Materials Science +17

1200V GaN Switches on Sapphire Substrate

Geetak Gupta, Masahito Kanamura, Brian L. Swenson et al. · 2022 · 46 citations

Engineering, Electrical Engineering, Materials Science +17

Short-Circuit Capability Demonstrated for GaN Power Switches

Davide Bisi, J. Gritters, Tsutomu Hosoda et al. · 2021 · 24 citations

Engineering, Electrical Engineering, Microelectronics +14

Short-Circuit Protection for GaN Power Devices with Integrated Current Limiter and Commercial Gate Driver

Davide Bisi, Long H. Nguyen, Philip Zuk et al. · 2022 IEEE Applied Power Electronics Conference and Exposition (APEC) · 2022 · 11 citations

Engineering, Electrical Engineering, Microelectronics +16

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