Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

Masahito Kanamura, Toshihiro Ohki, T. Kikkawa, +4

IEEE Electron Device Letters

Wide-bandgap SemiconductorGate DielectricsElectrical EngineeringEngineeringApplied Physics +6

InBody 720 as a new method of evaluating visceral obesity.

Hisataka Ogawa, Kazumasa Fujitani, Toshimasa Tsujinaka, +6

PubMed

High performance and high reliability AlGaN/GaN HEMTs

T. Kikkawa, Kozo Makiyama, Toshihiro Ohki, +4

physica status solidi (a)

Wide-bandgap SemiconductorHigh‐power Gan HemtsElectrical EngineeringEngineeringApplied Physics +7

GaN single-chip transceiver frontend MMIC for X-band applications

S. Masuda, Masao Yamada, Youichi Kamada, +6

Microwave CircuitsElectrical EngineeringGan Single-chip TransceiverEngineeringRf Semiconductor +11

C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

H. Shigematsu, Yusuke Inoue, Akihiko Akasegawa, +12

Wide-bandgap SemiconductorElectrical EngineeringC-band Power AmplifierEngineeringRf Semiconductor +7

600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates

T. Kikkawa, Tsutomu Hosoda, Kenji Imanishi, +30

Wide-bandgap SemiconductorElectrical EngineeringReliable Gan HemtsEngineeringGan Hemt +9

Reliability of GaN HEMTs: current status and future technology

Toshihiro Ohki, T. Kikkawa, Yusuke Inoue, +7

Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringGan Hemts +7

1200V GaN Switches on Sapphire Substrate

Geetak Gupta, Masahito Kanamura, Brian L. Swenson, +21

Electrical EngineeringEngineeringSapphire SubstratesGan HemtsGan Switches +7

GaN MMIC amplifiers for W-band transceivers

S. Masuda, Toshihiro Ohki, Kozo Makiyama, +7

Electrical EngineeringGrounded Coplanar WaveguideEngineeringRf SemiconductorGan Lna +7

Commercialization and reliability of 600 V GaN power switches

T. Kikkawa, Tsutomu Hosoda, K. Shono, +14

ReliabilityElectrical EngineeringReliability EngineeringEngineeringGan Power Switches +10