Kenji Imanishi

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

Masahito Kanamura, Toshihiro Ohki, T. Kikkawa et al. · IEEE Electron Device Letters · 2010 · 292 citations

Wide-bandgap Semiconductor, Gate Dielectrics, Electrical Engineering +8

InBody 720 as a new method of evaluating visceral obesity.

Hisataka Ogawa, Kazumasa Fujitani, Toshimasa Tsujinaka et al. · PubMed · 2011 · 117 citations

High performance and high reliability AlGaN/GaN HEMTs

T. Kikkawa, Kozo Makiyama, Toshihiro Ohki et al. · physica status solidi (a) · 2009 · 104 citations

Wide-bandgap Semiconductor, High‐power Gan Hemts, Electrical Engineering +9

GaN single-chip transceiver frontend MMIC for X-band applications

S. Masuda, Masao Yamada, Youichi Kamada et al. · 2012 · 59 citations

Microwave Circuits, Electrical Engineering, Gan Single-chip Transceiver +13

C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

H. Shigematsu, Yusuke Inoue, Akihiko Akasegawa et al. · 2009 · 50 citations

Wide-bandgap Semiconductor, Electrical Engineering, C-band Power Amplifier +9