Elvedin Memišević

InAs-Al hybrid devices passing the topological gap protocol

Morteza Aghaee, Arun Akkala, Zulfi Alam et al. · Physical review. B./Physical review. B · 2023 · 185 citations · Full text

Engineering, Topological Materials, Topological Gap Protocol +16

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Elvedin Memišević, Markus Hellenbrand, Erik Lind et al. · Nano Letters · 2017 · 97 citations · Full text

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Ali Saeidi, Teodor Rosca, Elvedin Memišević et al. · Nano Letters · 2020 · 88 citations · Full text

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

Sofia Johansson, Elvedin Memišević, Lars‐Erik Wernersson et al. · IEEE Electron Device Letters · 2014 · 83 citations

Electrical Engineering, Si Substrate, Engineering +10

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I<inf>on</inf> = 10 μA/μm for I<inf>off</inf> = 1 nA/μm at V<inf>ds</inf> = 0.3 V

Elvedin Memišević, Johannes Svensson, Markus Hellenbrand et al. · 2016 · 82 citations · Full text

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11