InAs-Al hybrid devices passing the topological gap protocol

Morteza Aghaee, Arun Akkala, Zulfi Alam, +125

Physical review. B./Physical review. B

EngineeringTopological MaterialsTopological Gap ProtocolTopological Quantum StateElectromagnetic Compatibility +14

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Elvedin Memišević, Markus Hellenbrand, Erik Lind, +6

Nano Letters

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Ali Saeidi, Teodor Rosca, Elvedin Memišević, +4

Nano Letters

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

Sofia Johansson, Elvedin Memišević, Lars‐Erik Wernersson, +1

IEEE Electron Device Letters

Electrical EngineeringSi SubstrateEngineeringMetal Pad OverlapHigh-frequency Device +8

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I<inf>on</inf> = 10 μA/μm for I<inf>off</inf> = 1 nA/μm at V<inf>ds</inf> = 0.3 V

Elvedin Memišević, Johannes Svensson, Markus Hellenbrand, +2

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesRecord High I60 +9

InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

Elvedin Memišević, Johannes Svensson, Erik Lind, +1

IEEE Transactions on Electron Devices

Device ModelingElectrical EngineeringEngineeringTunneling MicroscopyPhysics +10

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Elvedin Memišević, Johannes Svensson, Markus Hellenbrand, +2

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringTunneling Microscopy +8

III-V Heterostructure Nanowire Tunnel FETs

Erik Lind, Elvedin Memišević, Anil W. Dey, +1

IEEE Journal of the Electron Devices Society

Device ModelingElectrical EngineeringEngineeringTunneling MicroscopyPhysics +10

Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point S_MIN of 35 mV/Decade

Elvedin Memišević, Johannes Svensson, Erik Lind, +1

IEEE Electron Device Letters

Semiconductor TechnologyElectrical EngineeringElectronic DevicesSource DiameterHigh-speed Electronics +11

Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

Elvedin Memišević, Erik Lind, Markus Hellenbrand, +2

IEEE Electron Device Letters

SemiconductorsDevice ModelingElectrical EngineeringElectronic DevicesEngineering +13