Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Elvedin Memišević, Markus Hellenbrand, Erik Lind, +6

Nano Letters

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I<inf>on</inf> = 10 μA/μm for I<inf>off</inf> = 1 nA/μm at V<inf>ds</inf> = 0.3 V

Elvedin Memišević, Johannes Svensson, Markus Hellenbrand, +2

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesRecord High I60 +9

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Elvedin Memišević, Johannes Svensson, Markus Hellenbrand, +2

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringTunneling Microscopy +8

Protons: Critical Species for Resistive Switching in Interface‐Type Memristors

Sundar Kunwar, Chase Somodi, Rebecca A. Lalk, +12

Advanced Electronic Materials

SemiconductorsElectrical EngineeringElectronic DevicesIt MemristorsEngineering +10

High-Performance Vertical III-V Nanowire MOSFETs on Si With g_m > 3 mS/μm

Olli‐Pekka Kilpi, Markus Hellenbrand, Johannes Svensson, +4

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +12

Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

Elvedin Memišević, Erik Lind, Markus Hellenbrand, +2

IEEE Electron Device Letters

SemiconductorsDevice ModelingElectrical EngineeringElectronic DevicesEngineering +13

Low-Frequency Noise in III–V Nanowire TFETs and MOSFETs

Markus Hellenbrand, Elvedin Memišević, Martin Berg, +3

IEEE Electron Device Letters

Tfet Heterostructure MaterialsElectrical EngineeringEngineeringPhysicsNanoelectronics +10

Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si

Martin Berg, Olli‐Pekka Kilpi, Karl‐Magnus Persson, +4

IEEE Electron Device Letters

EngineeringNanodevicesIntegrated CircuitsBorder Trap DensitiesSemiconductor Device +15

Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

Markus Hellenbrand, Babak Bakhit, Hongyi Dou, +8

Science Advances

Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin films

José Silva, Marian Cosmin Istrate, Markus Hellenbrand, +12

Applied Materials Today

Materials ScienceMultiferroicsOptical MaterialsEngineeringFerroelastics +13