Markus Hellenbrand

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Elvedin Memišević, Markus Hellenbrand, Erik Lind et al. · Nano Letters · 2017 · 97 citations · Full text

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I<inf>on</inf> = 10 μA/μm for I<inf>off</inf> = 1 nA/μm at V<inf>ds</inf> = 0.3 V

Elvedin Memišević, Johannes Svensson, Markus Hellenbrand et al. · 2016 · 82 citations · Full text

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Elvedin Memišević, Johannes Svensson, Markus Hellenbrand et al. · IEEE Electron Device Letters · 2016 · 65 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Protons: Critical Species for Resistive Switching in Interface‐Type Memristors

Sundar Kunwar, Chase Somodi, Rebecca A. Lalk et al. · Advanced Electronic Materials · 2022 · 39 citations · Full text

Semiconductors, Electrical Engineering, Electronic Devices +12

High-Performance Vertical III-V Nanowire MOSFETs on Si With g_m > 3 mS/μm

Olli‐Pekka Kilpi, Markus Hellenbrand, Johannes Svensson et al. · IEEE Electron Device Letters · 2020 · 31 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14