Hongyi Dou

Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

Jie Zhang, Zehao Lin, Zhuocheng Zhang et al. · IEEE Transactions on Electron Devices · 2023 · 50 citations

Engineering, Electrical Engineering, Materials Science +14

First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability

Dongqi Zheng, Adam Charnas, Jackson Anderson et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 37 citations

Engineering, Materials Engineering, Materials Science +17

A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current<sub/> <sub/> <sub/>

Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao et al. · IEEE Electron Device Letters · 2022 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

Markus Hellenbrand, Babak Bakhit, Hongyi Dou et al. · Science Advances · 2023 · 35 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10¹¹, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability

Jie Zhang, Zhuocheng Zhang, Zehao Lin et al. · 2023 · 29 citations

Engineering, Electrical Engineering, Materials Science +15