T. Martin

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

Andrei Sarua, Hangfeng Ji, K.P. Hilton et al. · IEEE Transactions on Electron Devices · 2007 · 287 citations

Wide-bandgap Semiconductor, Electrical Engineering, High Temperature Materials +12

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

Andrei Sarua, Hangfeng Ji, Martin Kuball et al. · IEEE Transactions on Electron Devices · 2006 · 255 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16

Punch-through in short-channel AlGaN/GaN HFETs

Michael J. Uren, K. J. Nash, R.S. Balmer et al. · IEEE Transactions on Electron Devices · 2006 · 216 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

A novel ultra-high strength maraging steel with balanced ductility and creep resistance achieved by nanoscale β-NiAl and Laves phase precipitates

Li Sun, Thomas Simm, T. Martin et al. · Acta Materialia · 2018 · 214 citations · Full text

Materials Engineering, Materials Science, Phase Precipitates +7

Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Martin Kuball, S. Rajasingam, Andrei Sarua et al. · Applied Physics Letters · 2003 · 182 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +14