Daisuke Nakagawa

Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals

Kuniyoshi Okamoto, Hiroaki Ohta, Daisuke Nakagawa et al. · Japanese Journal of Applied Physics · 2006 · 131 citations

Engineering, Materials Engineering, Materials Science +17

Role of Dislocation in InGaN Phase Separation

Tomoya Sugahara, Maosheng Hao, Tao Wang et al. · Japanese Journal of Applied Physics · 1998 · 116 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells

T. Wang, Daisuke Nakagawa, J. Wang et al. · Applied Physics Letters · 1998 · 115 citations

Engineering, Materials Engineering, Materials Science +17

Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate

T. Wang, Y. Ohno, M. Lachab et al. · Applied Physics Letters · 1999 · 68 citations · Full text

Engineering, Materials Science, Physics +17

Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes

Ken Nakahara, Kentaro Tamura, Mitsuhiko Sakai et al. · Japanese Journal of Applied Physics · 2004 · 60 citations

Engineering, Electrical Engineering, Materials Science +17