Daisuke Nakagawa

Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals

Kuniyoshi Okamoto, Hiroaki Ohta, Daisuke Nakagawa et al. · Japanese Journal of Applied Physics · 2006 · 131 citations

Wide-bandgap Semiconductor, Engineering, Electroluminescence Emission +16

Role of Dislocation in InGaN Phase Separation

Tomoya Sugahara, Maosheng Hao, Tao Wang et al. · Japanese Journal of Applied Physics · 1998 · 116 citations

Engineering, Mechanics Of Materials, Ingan Phase Separation +18

Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells

T. Wang, Daisuke Nakagawa, J. Wang et al. · Applied Physics Letters · 1998 · 114 citations

Quantum Science, Photonics, Electrical Engineering +15

Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate

T. Wang, Y. Ohno, M. Lachab et al. · Applied Physics Letters · 1999 · 68 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes

Ken Nakahara, Kentaro Tamura, Mitsuhiko Sakai et al. · Japanese Journal of Applied Physics · 2004 · 60 citations

Optical Materials, Engineering, Optoelectronic Devices +16