C. J. Hitzman

Increased photoluminescence of strain-reduced, high-Sn composition Ge1−<i>x</i>Sn<i>x</i> alloys grown by molecular beam epitaxy

Robert Chen, Hai Lin, Yijie Huo et al. · Applied Physics Letters · 2011 · 257 citations

Engineering, Materials Engineering, Materials Science +17

Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy

P.M. Enquist, G. W. Wicks, L.F. Eastman et al. · Journal of Applied Physics · 1985 · 114 citations

Engineering, Materials Engineering, Materials Science +17

SiO 2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

David A. Cole, Jeffrey R. Shallenberger, Steven W. Novak et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 96 citations

Natural Sciences, Materials Engineering, Materials Science +17

Interface trap evaluation of Pd/Al₂O₃/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

R. D. Long, Christine M. Jackson, Jason Yang et al. · Applied Physics Letters · 2013 · 66 citations

Engineering, Materials Engineering, Materials Science +17

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO₂Resistance Switching Using Liquid Electrolyte Contacts

Kechao Tang, Andrew C. Meng, Fei Hui et al. · Nano Letters · 2017 · 59 citations

Natural Sciences, Materials Engineering, Materials Science +17