Etsuo Kurosawa

Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS

Yoshiki Kamata, M. Koike, Etsuo Kurosawa et al. · Applied Physics Express · 2014 · 38 citations

Engineering, Electrical Engineering, Materials Science +17

Extended Scalability of HfON/SiON Gate Stack Down to 0.57 nm Equivalent Oxide Thickness with High Carrier Mobility by Post-Deposition Annealing

Dai Ishikawa, Satoshi Kamiyama, Etsuo Kurosawa et al. · Japanese Journal of Applied Physics · 2009 · 17 citations

Engineering, Electrical Engineering, Materials Engineering +17

NiGe/n⁺-Ge junctions with ultralow contact resistivity formed by two-step P-ion implantation

M. Koike, Yuuichi Kamimuta, Etsuo Kurosawa et al. · Applied Physics Express · 2014 · 16 citations

Engineering, Electrical Engineering, Materials Science +14

Improving Threshold Voltage and Device Performance of Gate-First HfSiON/Metal Gate n-MOSFETs by an ALD La[sub 2]O[sub 3] Capping Layer

Satoshi Kamiyama, Etsuo Kurosawa, Yasuo Nara · Journal of The Electrochemical Society · 2008 · 12 citations

Engineering, Materials Engineering, Materials Science +17

Superior cut-off characteristics of L g =40nm W fin =7nm poly Ge junctionless Tri-gate FET for stacked 3D circuits integration

Yoshiki Kamata, Yuuichi Kamimuta, Keiji Ikeda et al. · Symposium on VLSI Technology · 2013 · 11 citations

Engineering, Electrical Engineering, Materials Science +16