Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa) ₂ O ₃ on m-plane sapphire

Riena Jinno, Celesta S. Chang, Takeyoshi Onuma, +10

Science Advances

2.44 kV Ga<inf>2</inf>O<inf>3</inf> vertical trench Schottky barrier diodes with very low reverse leakage current

Wenshen Li, Zongyang Hu, Kazuki Nomoto, +7

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringDc MeasurementsEngineering +10

Reduction in edge dislocation density in corundum-structured α-Ga₂O₃ layers on sapphire substrates with quasi-graded α-(Al,Ga)₂O₃ buffer layers

Riena Jinno, Takayuki Uchida, Kentaro Kaneko, +1

Applied Physics Express

EngineeringBuffer LayersEdge Dislocation DensityO 3Quantum Materials +15

Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition

Kentaro Kaneko, Kazuyuki Uno, Riena Jinno, +1

Journal of Applied Physics

Materials ScienceEpitaxial GrowthEngineeringCrystal Growth TechnologySurface Science +10

Thermal stability of epitaxial <i>α</i>-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire

Jonathan P. McCandless, Celesta S. Chang, Kazuki Nomoto, +16

Applied Physics Letters

Materials ScienceOxide HeterostructuresMaterials EngineeringEngineeringM-plane Sapphire +10

Evaluation of band alignment of α-Ga₂O₃/α-(Al<i>_x</i>Ga₁₋<i>_x</i>)₂O₃heterostructures by X-ray photoelectron spectroscopy

Takayuki Uchida, Riena Jinno, Shu Takemoto, +2

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorX-ray SpectroscopyEngineeringValence Band OffsetsConduction Band Offsets +15

Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD

Riena Jinno, Kentaro Kaneko, Shizυo Fujita

AIP Advances

Control of Crystal Structure of Ga₂O₃ on Sapphire Substrate by Introduction of α‐(Al<i>_x</i>Ga_1−<i>x</i>)₂O₃ Buffer Layer

Riena Jinno, Takayuki Uchida, Kentaro Kaneko, +1

physica status solidi (b)

Aluminium NitrideCrystal StructureEngineeringCrystal Growth TechnologySapphire Substrate +14

1.6 kV Vertical Ga₂O₃ FinFETs With Source-Connected Field Plates and Normally-off Operation

Zongyang Hu, Kazuki Nomoto, Wenshen Li, +4

Low-power ElectronicsElectrical EngineeringEngineeringSource-connected Field PlatesHigh Voltage Engineering +5

Enhancement of epitaxial lateral overgrowth in the mist chemical vapor deposition of<i>α</i>-Ga₂O₃by using a-plane sapphire substrate

Riena Jinno, Nobuhiro Yoshimura, Kentaro Kaneko, +1

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringChemical EngineeringEngineeringCrystalline Defects +13