Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition

Abstract

Routes to semi-stable phases of Ga2O3 are the subject of extended discussions based on the review of growth methods, growth conditions, and precursors in works that report semi-stable phases other than the thermally stable β phase. The focus here is on mist chemical vapor deposition because it has produced single-phase Ga2O3 of α, γ, and ε (or κ) in terms of the substrate materials, and features of this growth method for phase control are emphasized. Recent reports of phase control by other growth technology give a deeper understanding of how to determine and control the phases, increasing the opportunities to fully utilize the novel and unique properties of Ga2O3.