Mohammad Najmzadeh - Concepedia

Author

Mohammad Najmzadeh

École Polytechnique Fédérale de Lausanne ORCID

Also Known As

M Najmzadeh, M. Najmzadeh, Mohammad Najmzadeh, Najmzadeh, Mohammad

Publications

364

Citations

H-Index

Concepts

All Affiliations

École Polytechnique Fédérale de Lausanne University of California, Berkeley Newcastle University

About

Mohammad Najmzadeh is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, applied physics, and nanotechnology.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	168
2	Applied Physics	8	8	168
3	Electrical Engineering	6	6	127
4	Materials Science	2	2	36
5	Physics	1	1	21

Mohammad Najmzadeh

Publications

321

Citations

H-Index

Page 1

	Year	Citations
MoS2 Heterojunctions by Thickness Modulation Mahmut Tosun, Deyi Fu, Sujay B. Desai, Scientific Reports	2015	108
The High-Mobility Bended n-Channel Silicon Nanowire Transistor Kirsten E. Moselund, Mohammad Najmzadeh, P. Dobrosz, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSilicon NanowiresEngineeringNanoelectronics	2010	46
A silicon straight tube fluid density sensor Mohammad Najmzadeh, Sjoerd Haasl, Peter Enoksson Journal of Micromechanics and Microengineering	2007	34
Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5nm cross-section and high uniaxial tensile strain Mohammad Najmzadeh, D. Bouvet, Wladek Grabinski, Solid-State Electronics Electrical EngineeringEngineeringNanotechnologyNanoelectronicsApplied Physics	2012	23
Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support Yuping Zeng, Chien-I Kuo, Ching-Yi Hsu, IEEE Transactions on Nanotechnology Wide-bandgap SemiconductorSemiconductor TechnologyCategoryquantum ElectronicsEngineeringTunneling Microscopy	2015	21
Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs Mohammad Najmzadeh, Luca De Michielis, D. Bouvet, Microelectronic Engineering Electrical EngineeringSilicon NanowiresEngineeringNanotechnologyApplied Physics	2009	20
Multilayer ReS<sub>2</sub> lateral p–n homojunction for photoemission and photodetection Mohammad Najmzadeh, Changhyun Ko, Kedi Wu, Applied Physics Express SemiconductorsMaterials ScienceFunctional NanomaterialsElectronic DevicesEngineering	2016	20
Investigation of oxidation-induced strain in a top-down Si nanowire platform Mohammad Najmzadeh, D. Bouvet, P. Dobrosz, Microelectronic Engineering Materials ScienceNanoscale ScienceElectrical EngineeringEngineeringNanomaterials	2009	16
Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5nm Mohammad Najmzadeh, Matthieu Berthomé, Jean-Michel Sallèse, Solid-State Electronics Electrical EngineeringElectron Mobility ExtractionEngineeringNanotechnologyElectronic Engineering	2014	12
2D MOSFET operation of a fully-depleted bulk MoS<inf>2</inf> at quasi-flatband back-gate Mohammad Najmzadeh, Juan Pablo Duarte, Sourabh Khandelwal,	2015	11

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