Wladek Grabinski - Concepedia

Author

Wladek Grabinski

École Polytechnique Fédérale de Lausanne ORCID

Also Known As

GRABINSKI, WLADYSLAW, Grabinski, W., Grabinski, Wladek, Grabinski, Wladyslaw, W Grabinski, W. Grabinski, Wladek Grabinski, Wladyslaw Grabinski, Władysław Grabiński

Publications

678

Citations

H-Index

Concepts

All Affiliations

École Polytechnique Fédérale de Lausanne

About

Wladek Grabinski is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	210
2	Electrical Engineering	8	8	210
3	Applied Physics	5	5	93
4	Physics	3	3	53
5	Computer Engineering	2	2	43

Wladek Grabinski

Publications

210

Citations

H-Index

Page 1

	Year	Citations
RF distortion analysis with compact MOSFET models P. Bendix, P. Rakers, P. Wagh, Device ModelingElectrical EngineeringEngineeringRadio FrequencyNonlinear Circuit	2004	65
Electrical modeling of a pressure sensor MOSFET Jean-Michel Sallèse, Wladek Grabinski, Vincent Meyer, Sensors and Actuators A Physical Device ModelingElectrical EngineeringEngineeringPressure Sensor MosfetSensor Interface	2001	39
Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model Christophe Lallement, Jean-Michel Sallèse, Matthias Bucher, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringVlsi Design	2003	30
Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5nm cross-section and high uniaxial tensile strain Mohammad Najmzadeh, D. Bouvet, Wladek Grabinski, Solid-State Electronics Electrical EngineeringEngineeringNanotechnologyNanoelectronicsApplied Physics	2012	23
Steep slope VO<inf>2</inf> switches for wide-band (DC-40 GHz) reconfigurable electronics Wolfgang A. Vitale, Antonio Paone, Montserrat Fernández-Bolaños, Steep Slope VoElectrical EngineeringCmos CompatibleEngineeringRf Semiconductor	2014	18
ADVANCEMENTS IN DC AND RF MOSFET MODELING WITH THE EPFL-EKV CHARGE BASED MODEL Wladek Grabinski, Matthias Bucher, Christophe Lallement, Device ModelingElectrical EngineeringEngineeringCircuit SystemCircuit Design	2001	13
Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5nm Mohammad Najmzadeh, Matthieu Berthomé, Jean-Michel Sallèse, Solid-State Electronics Electrical EngineeringElectron Mobility ExtractionEngineeringNanotechnologyElectronic Engineering	2014	12
Extended Charges Modeling for Deep Submicron CMOS Matthias Bucher, Jean-Michel Sallèse, Christophe Lallement, Infoscience (Ecole Polytechnique Fédérale de Lausanne) Device ModelingElectrical EngineeringDynamic BehaviorVlsi DesignPhysics	1999	10

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