Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5nm cross-section and high uniaxial tensile strain - Concepedia

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Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5nm cross-section and high uniaxial tensile strain

DOI Full Paper Access

23

Citations

18

References

2012

Year

Mohammad Najmzadeh, D. Bouvet, Wladek Grabinski, J.-M. Sallese, Adrian M. Ionescu

Solid-State Electronics

Electrical EngineeringEngineeringNanotechnologyNanoelectronicsApplied PhysicsSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsSub-5nm Cross-sectionSemiconductor Device

References

	Year	Citations

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