P. Dobrosz

Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

Goutam Kumar Dalapati, Sanatan Chattopadhyay, K.S.K. Kwa et al. · IEEE Transactions on Electron Devices · 2006 · 78 citations

Electrical Engineering, Engineering, Channel Thickness +13

The High-Mobility Bended n-Channel Silicon Nanowire Transistor

Kirsten E. Moselund, Mohammad Najmzadeh, P. Dobrosz et al. · IEEE Transactions on Electron Devices · 2010 · 46 citations · Full text

Device Modeling, Electrical Engineering, Silicon Nanowires +12

Ion sputter-deposition and in-air crystallisation of Cr2AlC films

Vladimir Vishnyakov, O. Crisan, P. Dobrosz et al. · Vacuum · 2013 · 42 citations

Materials Science, Engineering, Surface Science +7

Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

Kirsten E. Moselund, P. Dobrosz, Sarah H. Olsen et al. · 2007 · 40 citations · Full text

Bended Nw Mosfets, Wide-bandgap Semiconductor, Engineering +18

Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors

Sarah H. Olsen, A.G. O’Neill, P. Dobrosz et al. · Journal of Applied Physics · 2005 · 31 citations

Electrical Engineering, Engineering, Stress-induced Leakage Current +9