Junjie Yang - Concepedia

Author

Junjie Yang

Peking University ORCID

Also Known As

J. W. Yang, J. Yang, Jason Y. Yang, Jun-Jie Yang, Junjie Yang, Yang, J. J., Yang, Junjie

Publications

613

Citations

H-Index

Concepts

All Affiliations

Peking University Tsinghua University Beijing University of Technology Pohang University of Science and Technology Nanopolis Suzhou (China)

About

Junjie Yang is an author at Peking University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	167
2	Applied Physics	4	4	143
3	Natural Sciences	1	1	30
4	Chemistry	1	1	30
5	Computer Engineering	1	1	10

Junjie Yang

Publications

478

Citations

H-Index

Page 1

	Year	Citations
An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps Yanlin Wu, Jin Wei, Maojun Wang, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2022	61
Spin-induced band modifications of graphene through intercalation of magnetic iron atoms S. J. Sung, Junjie Yang, P. R. Lee, Nanoscale	2014	57
Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT Muqin Nuo, Jin Wei, Maojun Wang, IEEE Transactions on Electron Devices	2022	46
Excitations of Intercalated Metal Monolayers in Transition Metal Dichalcogenides Shiyu Fan, Sabine N. Neal, Choongjae Won, Nano Letters	2020	33
Interlocked chiral/polar domain walls and large optical rotation in Ni3TeO6 Xueyun Wang, Fei‐Ting Huang, Junjie Yang, APL Materials Crystal StructureOptical MaterialsEngineeringMagnetic ResonanceMolecular Biology	2015	30
Core structure and mobility of edge dislocations in face-centered-cubic chemically complex NiCoFe and NiCoFeCu equiatomic solid-solution alloys Wei Li, S.I. Rao, Qingyuan Wang, Materialia Materials ScienceMaterials EngineeringEdge DislocationsEngineeringDislocation Interaction	2020	28
Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer Teng Li, Meng Zhang, Jingjing Yu, IEEE Transactions on Electron Devices	2024	27
600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects Junjie Yang, Jin Wei, Yanlin Wu, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsBuffer Trap	2022	24
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension Jiawei Cui, Yanlin Wu, Junjie Yang, IEEE Transactions on Electron Devices	2024	20
650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension Towards Enhanced Short-Circuit Reliability Jingjing Yu, Jin Wei, Maojun Wang, IEEE Electron Device Letters	2023	18

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