F. Boulard

Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

Camille Petit-Étienne, Maxime Darnon, Laurent Vallier et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 74 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors

E. Giard, Isabelle Ribet-Mohamed, Julien Jaeck et al. · Journal of Applied Physics · 2014 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

A New nBn IR Detection Concept Using HgCdTe Material

O. Gravrand, F. Boulard, A. Ferron et al. · Journal of Electronic Materials · 2015 · 28 citations

Natural Sciences, Materials Engineering, Materials Science +10

A new FDSOI spin qubit platform with 40nm effective control pitch

Thomas Bédécarrats, Bruna Cardoso Paz, Bernard M. Diaz et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 25 citations · Full text

Natural Sciences, Electrical Engineering, Physics +17

Shockley–Read–Hall Lifetime Study and Implication in HgCdTe Photodiodes for IR Detection

O. Gravrand, J. Rothman, Bruno Delacourt et al. · Journal of Electronic Materials · 2018 · 23 citations

Engineering, Electrical Engineering, Materials Science +13