Yeon-Cheol Heo

In<sub>0.53</sub>Ga<sub>0.47</sub>As-Based nMOSFET Design for Low Standby Power Applications

Krishna K. Bhuwalka, Zhenhua Wu, Hyeon-Kyun Noh et al. · IEEE Transactions on Electron Devices · 2015 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +17

A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond

Dong-il Bae, Geum-Jong Bae, Krishna K. Bhuwalka et al. · 2016 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +17

1 Giga bit SOI DRAM with fully bulk compatible process and body-contacted SOI MOSFET structure

Yo-Hwan Koh, Min-Rok Oh, Jong‐Wook Lee et al. · 2002 · 20 citations

Engineering, Computer Engineering, Electrical Engineering +17

Impact of Sidewall Passivation and Channel Composition on In<sub><italic>x</italic></sub>Ga<sub>1-<italic>x</italic></sub>As FinFET Performance

Arun V. Thathachary, G. Lavallee, Mirco Cantoro et al. · IEEE Electron Device Letters · 2014 · 16 citations

Engineering, Electrical Engineering, Materials Engineering +8