W. M. van de Wijgert

Author

Philips (Netherlands)

Also Known As

W. M. v. d. Wijgert, W. M. van de Wijgert, W.M. Van de Wijgert, W.M. van de Wijgert, W.M.v.d. Wijgert

Publications

573

Citations

H-Index

Concepts

All Affiliations

Philips (Netherlands)NXP (Netherlands)

About

W. M. van de Wijgert is an author at Philips (Netherlands) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	568
2	Applied Physics	10	10	568
3	Chemistry	3	3	120
4	Natural Sciences	1	1	52
5	Chemical Engineering	1	1	40

W. M. van de Wijgert

Publications

568

Citations

H-Index

Page 1

	Year	Citations
Influence of Deposition Temperature, Gas Pressure, Gas Phase Composition, and RF Frequency on Composition and Mechanical Stress of Plasma Silicon Nitride Layers W. A. P. Claassen, W. G. J. N. Valkenburg, M. F. C. Willemsen, Journal of The Electrochemical Society EngineeringMechanical EngineeringPlasma PhysicsSimplified Reaction ModelSilicon On Insulator	1985	190
The effect of doping on the formation of swirl defects in dislocation-free czochralski-grown silicon crystals Anton Köck, W. M. van de Wijgert Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringDislocation InteractionPhysics	1980	99
The influence of thermal point defects on the precipitation of oxygen in dislocation-free silicon crystals Anton Köck, W. M. van de Wijgert Applied Physics Letters EngineeringX-ray Transmission TopographyCrystal Growth TechnologyOxygen PrecipitationChemistry	1981	52
The effect of doping on microdefect formation in as-grown dislocation-free Czochralski silicon crystals Anton Köck, W. T. Stacy, W. M. van de Wijgert Applied Physics Letters Materials EngineeringMaterials ScienceEngineeringDislocation InteractionPhysics	1979	48
On the relation between deposition conditions and (mechanical) stress in plasma silicon nitride layers W. A. P. Claassen, W.G.J.M. Valkenburg, W. M. van de Wijgert, Thin Solid Films Materials ScienceEngineeringMechanical EngineeringApplied PhysicsSurface Science	1985	45
Hydrogenation during thermal nitridation of silicon dioxide A. E. T. Kuiper, M. F. C. Willemsen, A. M. L. Theunissen, Journal of Applied Physics EngineeringThermal NitridationNitrogen ProfilesChemistryNitrogen Incorporation	1986	40
Surface segregation and initial oxidation of titanium silicide films A. E. T. Kuiper, G. C. J. van der Ligt, W. M. van de Wijgert, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Materials ScienceSemiconductorsTisi2 FilmsHigh-temperature BehaviorEngineering	1985	28
Growth of dislocation-free gallium-phosphide crystals from a stoichiometric melt P.J. Roksnoer, J.M.P.L. Huijbregts, W. M. van de Wijgert, Journal of Crystal Growth Materials ScienceEngineeringDislocation InteractionCrystal Growth TechnologyApplied Physics	1977	24
Microdefects and striations in dislocation-free LEC-GaP crystals Anton Köck, W. M. van de Wijgert, J. H. T. Hengst, Journal of Crystal Growth EngineeringDislocation InteractionCrystal MaterialApplied PhysicsCondensed Matter Physics	1977	24
Zn diffusion-enhanced disordering and ordering of InGaAsP/InP quantum well structures G. J. van Gurp, W. M. van de Wijgert, G. M. Fontijn, Journal of Applied Physics EngineeringZn Diffusion-enhanced DisorderingSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor	1990	18

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