The effect of doping on microdefect formation in as-grown dislocation-free Czochralski silicon crystals

Abstract

The influence of p- and n-type doping on microdefect formation in macroscopically dislocation-free as-grown Czochralski silicon crystals has been studied using copper decoration, x-ray transmission topography, preferential etching, and high-voltage transmission electron microscopy. B-doped crystals are found to contain undecorated perfect dislocation loops of an interstitial nature. In Sb-doped crystals two other types of microdefects are present, one of which consists of a precipitate particle exhibiting a vacancy type of strain field. All defects are distributed in a striated pattern.