K. Eikyu

A quantitative analysis of time-decay reproducible stress-induced leakage current in SiO/sub 2/ films

K. Sakakibara, N. Ajika, K. Eikyu et al. · IEEE Transactions on Electron Devices · 1997 · 62 citations

Engineering, Silicon On Insulator, Semiconductor Device +16

Application of a statistical compact model for Random Telegraph Noise to scaled-SRAM Vmin analysis

M. Tanizawa, S. Ohbayashi, T. Okagaki et al. · 2010 · 41 citations

Electrical Engineering, Log-normal Statistics, Engineering +15

On the scaling limit of the Si-IGBTs with very narrow mesa structure

K. Eikyu, Atsushi Sakai, Hitoshi Matsuura et al. · 2016 · 40 citations

Electrical Engineering, Engineering, Narrowest Mesa +11

Test structure measuring inter- and intralayer coupling capacitance of interconnection with subfemtofarad resolution

T. Kunikiyo, T. Watanabe, Toshiki Kanamoto et al. · IEEE Transactions on Electron Devices · 2004 · 15 citations

Subfemtofarad Resolution, Engineering, Test Structure +17

70 nm SOI-CMOS of 135 GHz f/sub max/ with dual offset-implanted source-drain extension structure for RF/analog and logic applications

Takeru Matsumoto, Shoji Maeda, Kosuke Ota et al. · 2002 · 15 citations

Ghz F/sub Max/, World Record Data, Electrical Engineering +12