2010 · 41 citations · 1 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsStochastic ProcessesTransport PhenomenaDevice ModelingNoise In Electronic DevicesNoise In Semiconductor DevicesNoise Analysis In Integrated CircuitsNoise CharacterizationRandom NoiseRandom Telegraph NoiseStatistical Fluctuation Analysis
A statistical compact RTN (Random Telegraph Noise) model with a fixed V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> shift and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> dependent trap time constants is proposed. It accurately reproduces the experimental observation of larger V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> fluctuation at higher |V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> |. The model is also applied to analysis of SRAM V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> fluctuation and finds out the distribution follows a log-normal statistics.
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