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Application of a statistical compact model for Random Telegraph Noise to scaled-SRAM Vmin analysis
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2010
Year
Unknown Venue
Electrical EngineeringLog-normal StatisticsEngineeringExperimental ObservationPhysicsRandom Telegraph NoiseTiming AnalysisStochastic ProcessesComputer EngineeringNoiseStatistical Compact RtnStochastic Dynamical SystemStochastic AnalysisStochastic ResonanceStatistical Compact ModelMicroelectronicsSignal ProcessingScaled-sram Vmin Analysis
A statistical compact RTN (Random Telegraph Noise) model with a fixed V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> shift and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> dependent trap time constants is proposed. It accurately reproduces the experimental observation of larger V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> fluctuation at higher |V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> |. The model is also applied to analysis of SRAM V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> fluctuation and finds out the distribution follows a log-normal statistics.
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