IEEE Transactions on Electron Devices · 1997 · 62 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCurrent DistributionCurrent-voltage CharacteristicsDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor InterfacesSemiconductor ReliabilityElectron TunnelingGate LeakageGate Leakage CurrentGate Oxide LeakageLeakage CurrentLeakage Current ModelingStress-induced Leakage CurrentTraps
In the cases of both Fowler-Nordheim (FN) stress and substrate hot-hole stress, three reproducible stress-induced leakage current (SILC) components have been found for the repeated unipolar gate-voltage scans in 9.2 nm wet oxides. To clarify the mechanisms of these current components, a quantitative analysis has been developed. By precisely modeling the phonon assisted tunneling process, it has been shown that the E-J and t-J characteristics of the reproducible current components can be completely simulated as electron tunneling processes into the neutral traps, each with a single trap level. From this analysis, the physical parameters of the traps have been estimated with a reasonable degree of accuracy. Furthermore, the increase in distribution of the neutral trap density toward both the SiO/sub 2/ interfaces has also been estimated.
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