K. Sakakibara - Concepedia

Author

K. Sakakibara

Mitsubishi Electric (Japan)

Also Known As

K. Sakakibara, Kuniaki Sakakibara

Publications

270

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)

About

K. Sakakibara is an author at Mitsubishi Electric (Japan) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	248
2	Applied Physics	8	8	248
3	Electrical Engineering	6	6	206
4	Natural Sciences	2	2	36
5	Computer Engineering	1	1	42

K. Sakakibara

Publications

248

Citations

H-Index

Page 1

	Year	Citations
A quantitative analysis of time-decay reproducible stress-induced leakage current in SiO/sub 2/ films K. Sakakibara, N. Ajika, K. Eikyu, IEEE Transactions on Electron Devices EngineeringSilicon On InsulatorSemiconductor DeviceTunneling MicroscopyNanoelectronics	1997	62
Novel electron injection method using band-to-band tunneling induced hot electrons (BBHE) for flash memory with a P-channel cell T. Ohnakado, K. Mitsunaga, Masahiro Nunoshita, Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringPhysics	2002	42
A quantitative analysis of stress induced excess current (SIEC) in SiO/sub 2/ films K. Sakakibara, N. Ajika, M. Hatanaka, EngineeringSilicon On InsulatorSemiconductor DeviceTunneling MicroscopyNanoelectronics	1996	42
Identification of stress-induced leakage current components and the corresponding trap models in SiO/sub 2/ films K. Sakakibara, N. Ajika, M. Hatanaka, IEEE Transactions on Electron Devices EngineeringGate VoltageSilicon On InsulatorTime-decay Stress-induced LeakageSemiconductor Device	1997	35
Cyclotron-resonance studies of electronic properties in ZnSe Takashi Ohyama, K. Sakakibara, E. Otsuka, Physical review. B, Condensed matter EngineeringExcitation Energy TransferElectronic PropertiesElectronic StructureCyclotron-resonance Experiment	1988	23
Influence of holes on neutral trap generation K. Sakakibara, N. Ajika, Hirokazu Miyoshi IEEE Transactions on Electron Devices EngineeringMechanicsNeutral Trap GenerationMechanical EngineeringApplied Physics	1997	19
Microscopic and statistical approach to SILC characteristics-exponential relation between distributed Fowler Nordheim coefficients and its physical interpretation Naoki Tsuji, K. Sakakibara, N. Ajika, EngineeringPhysical InterpretationSilc Characteristics-exponential RelationMsilc CharacteristicsMathematical Statistical Physic	2002	13
Identification of stress-induced leakage current components and the corresponding trap models in SiO/sub 2/ films [MOS transistors] K. Sakakibara, N. Ajika, M. Hatanaka, IEEE Transactions on Electron Devices Electrical EngineeringSemiconductor DeviceEngineeringStress-induced Leakage CurrentBias Temperature Instability	1997	12

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