Byeong-Cheol Kim

Electrochemical properties of pore-filled anion exchange membranes and their ionic transport phenomena for vanadium redox flow battery applications

Seok‐Jun Seo, Byeong-Cheol Kim, Ki-Won Sung et al. · Journal of Membrane Science · 2012 · 111 citations

Chemical Engineering, Engineering, Electrochemical Power Source +9

A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction

Tae-Young Oh, Young‐Soo Sohn, Seung-Jun Bae et al. · IEEE Journal of Solid-State Circuits · 2010 · 34 citations

Engineering, Memory Design, Vlsi Design +16

A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW

Seung-Jun Bae, Young‐Soo Sohn, Tae-Young Oh et al. · 2011 · 32 citations

Hardware Security, System On Chip, Crosstalk Equalizer +15

A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking

Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo et al. · 2018 · 27 citations

Engineering, Hardware Acceleration, High Bandwidth Memory +13

18.1 A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI monitor, jitter reduction techniques and improved power distribution

Hye-Yoon Joo, Seung-Jun Bae, Young‐Soo Sohn et al. · 2016 · 26 citations

Hardware Security, Wck Clock Receiver, Engineering +10