L. Knuuttila

Low Temperature Growth GaAs on Ge

L. Knuuttila, A. Lankinen, J. Likonen et al. · Japanese Journal of Applied Physics · 2005 · 32 citations

Engineering, Materials Engineering, Materials Science +17

The Role of Silicon Substrate on the Leakage Current Through GaN-on-Si Epitaxial Layers

Luca Sayadi, Giuseppe Iannaccone, Oliver D. Häberlen et al. · IEEE Transactions on Electron Devices · 2017 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

Determination of crystal misorientation in epitaxial lateral overgrowth of GaN

W.M. Chen, P.J. McNally, K. Jacobs et al. · Journal of Crystal Growth · 2002 · 18 citations

Engineering, Materials Engineering, Materials Science +13

Mapping of mechanical stresses in silicon substrates due to lead tin solder bump reflow process via synchrotron x-ray topography and finite element modelling

J. Kanatharana, J J P rez-Camacho, T. Buckley et al. · Journal of Physics D Applied Physics · 2003 · 17 citations

Natural Sciences, Materials Engineering, Materials Science +17

Synchrotron X-ray topography study of defects in indium antimonide P-I-N structures grown by metal organic vapour phase epitaxy

Juha Riikonen, T. Tuomi, A. Lankinen et al. · Journal of Materials Science Materials in Electronics · 2005 · 17 citations

Natural Sciences, Materials Science, Physics +16